JPH0117256B2 - - Google Patents

Info

Publication number
JPH0117256B2
JPH0117256B2 JP56143299A JP14329981A JPH0117256B2 JP H0117256 B2 JPH0117256 B2 JP H0117256B2 JP 56143299 A JP56143299 A JP 56143299A JP 14329981 A JP14329981 A JP 14329981A JP H0117256 B2 JPH0117256 B2 JP H0117256B2
Authority
JP
Japan
Prior art keywords
film
silicon nitride
nitride film
field insulating
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56143299A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5844748A (ja
Inventor
Masataka Shingu
Hideo Monma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP14329981A priority Critical patent/JPS5844748A/ja
Publication of JPS5844748A publication Critical patent/JPS5844748A/ja
Publication of JPH0117256B2 publication Critical patent/JPH0117256B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Local Oxidation Of Silicon (AREA)
  • Element Separation (AREA)
JP14329981A 1981-09-10 1981-09-10 半導体装置の製造方法 Granted JPS5844748A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14329981A JPS5844748A (ja) 1981-09-10 1981-09-10 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14329981A JPS5844748A (ja) 1981-09-10 1981-09-10 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5844748A JPS5844748A (ja) 1983-03-15
JPH0117256B2 true JPH0117256B2 (en]) 1989-03-29

Family

ID=15335514

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14329981A Granted JPS5844748A (ja) 1981-09-10 1981-09-10 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS5844748A (en])

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5057451A (en) * 1990-04-12 1991-10-15 Actel Corporation Method of forming an antifuse element with substantially reduced capacitance using the locos technique
US5780352A (en) * 1995-10-23 1998-07-14 Motorola, Inc. Method of forming an isolation oxide for silicon-on-insulator technology

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5548950A (en) * 1978-10-03 1980-04-08 Toshiba Corp Manufacturing of semiconductor device

Also Published As

Publication number Publication date
JPS5844748A (ja) 1983-03-15

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